advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 60v lower gate charge r ds(on) 45m fast switching characteristic i d 5.6a rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 50 /w data and specifications subject to change without notice halogen-free product 1 ap9479gm-hf rating 60 + 25 5.6 parameter drain-source voltage gate-source voltage continuous drain current 3 continuous drain current 3 4.5 pulsed drain current 1 30 total power dissipation 2.5 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.02 storage temperature range 200810202 thermal data parameter advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the so-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. g d s s s s g d d d d so-8
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 60 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : , i d =1ma - 0.06 - v/ : r ds(on) static drain-source on-resistance 2 v gs =10v, i d =5a - - 45 m ? ? ?
a p9479gm-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 10 20 30 0246 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0 v 5.0v 4.5v v g =3.0v 0 10 20 30 0246 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 7.0v 5.0v 4.5v v g =3.0v t a = 150 o c 35 40 45 50 55 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =3a t a =25 : 0.6 1.0 1.4 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =5a v g =10v 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v) 0 2 4 6 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 ap9479gm-hf q v g 4.5v q gs q gd q g charge 0 3 6 9 12 15 0102030 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =5a v ds =30v v ds =38v v ds =48v 10 100 1000 10000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 10 100 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0 10 20 30 0246 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 125 : /w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse
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